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| Preliminary RF3160 DUAL-BAND GSM/DCS POWER AMP MODULE 2 Typical Applications * 3V Dual-Band GSM/DCS Handsets * Commercial and Consumer Systems * Portable Battery-Powered Equipment * GPRS Compatible * GSM, E-GSM and DCS Products 2 POWER AMPLIFIERS Product Description The RF3160 is a high-power, high-efficiency power amplifier module. The device is self-contained with 50 input and output terminals. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in GSM/DCS handheld digital cellular equipment and other applications in the 880MHz to 915MHz and 1710MHz to 1785MHz bands. On-board power control provides over 70dB of control range with an analog voltage input, and provides power down with a logic "low" for standby operation. The device is packaged in an ultra-small (9mmx11mm) LCC, minimizing the required board space. 1.910 TYP 7.040 1 1.40 1.25 0.450 0.075 0.760 TYP 4.520 9.09 0.10 FULL RADIUS TYP R0.860 TYP Side View Dimensions in mm. All contact points are gold-plated, lead-free surfaces. 11.61 0.10 0.920 TYP NOTES: Bottom View 1. Shaded area is pin 1. 2. All dimensions without specific tolerances are for reference only. Optimum Technology Matching(R) Applied Si BJT Si Bi-CMOS u BAND SELECT Package Style: Module (9mm x11mm) GaAs HBT SiGe HBT uSi CMOS VAPC GaAs MESFET Features * Single 2.8V to 5.0V Supply Voltage * +35.0dBm GSM Output Power at 3.2V * +32.5dBm DCS Output Power at 3.2V 13 GND 12 DCS OUT 11 GND 10 GSM OUT 9 GND 16 GND 1 DCS IN 2 GND 3 GSM IN 4 GND 5 6 VCC 15 GND 14 * 55% GSM and 50% DCS Efficiency * Internal Band Select Ordering Information RF3160 RF3160 PCBA Dual-Band GSM/DCS Power Amp Module Fully Assembled Evaluation Board 7 GND 8 VCC Functional Block Diagram RF Micro Devices, Inc. 7625 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com Rev A4 010420 2-261 RF3160 Absolute Maximum Ratings Parameter Supply Voltage Power Control Voltage (VAPC1,2) DC Supply Current Input RF Power Duty Cycle at Max Power Output Load VSWR Operating Case Temperature Storage Temperature Preliminary Rating -0.5 to +5.0 -0.5 to +3.0 2400 +15 50 6:1 -30 to +85 -30 to +85 Unit VDC V mA dBm % C C Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). 2 POWER AMPLIFIERS Parameter Overall (GSM Mode) Operating Frequency Range Maximum Output Power PAE Efficiency Input Power for Max Output Output Noise Power Specification Min. Typ. Max. Unit Condition Temp=+25C, VCC =3.2V, VAPCGSM =1.9V, PIN =6dBm, Freq=880MHz to 915MHz, 25% Duty Cycle, Pulse Width=1154s 34.5 50 +6 880 to 915 35.0 55 +8 +10 -72 -84 MHz dBm % dBm dBm dBm dBm dBm dBm dBm dBm Temp = 25C, VCC =3.2V, VAPCGSM =1.9V At POUT,MAX, VCC =3.2V RBW=100kHz, 925MHz to 935MHz, POUT >34.5dBm RBW=100kHz, 935MHz to 960MHz, POUT >34.5dBm VAPCGSM =0.1V, PIN =-5dBm POUT >34.5dBm 5dBm -40 -15 -7 -7 -7 50 3:1 6:1 10:1 50 1.8 0.1 60 1.9 0.5 100 10 1 10 2 0 2 2.8 2.9 3.2 2 30 0.5 2.8 5.0 4.7 V V dB dB/V pF mA A S V V V V A A Spurious<-36dBm, VAPCGSM =0.1V to 1.9V, RBW=3MHz PIN =6dBm, POUT <34.5dBm, VCC =4.6V, ZS =50 Load impedance presented at RF OUT pad Max. POUT Min. POUT VAPC1,2 =0.1V to 1.9V POUT =-10dBm to 34.5dBm DC to 2MHz VAPC =1.9V VAPC =0V VAPC =0V to 1.9V GSM DCS Specifications Nominal operating limits, POUT <+34.5dBm DC Current at POUT,MAX VAPC1,2 =0.1V. No RF input power. Power Control VAPC1 Power Control "ON" Power Control "OFF" Power Control Range Gain Control Slope APC Input Capacitance APC Input Current Turn On/Off Time Band Select Overall Power Supply Power Supply Voltage Power Supply Current 2-262 Rev A4 010420 Preliminary Parameter Specification Min. Typ. Max. Unit RF3160 Condition Temp=25C, VCC =3.2V, VAPCDCS =1.9V, PIN =6dBm, Freq=1710MHz to 1785MHz, 25% Duty Cycle, pulse width=1154s 31.9 42 +6 1710 to 1785 32.5 50 +8 -80 +10 -76 -48 -7 -7 -7 50 3:1 6:1 10:1 50 1.8 0.1 60 1.9 0.5 100 10 1 10 100 3.2 2.9 4.7 1.3 30 V V dB dB/V pF mA A ns V V A A Spurious <-36dBm, VAPCDCS =0.1V to 1.9V, RBW =3MHz PIN =6dBm, POUT <31.9dBm, VCC =4.6V, ZS =50 Load impedance presented at RF OUT pin Max. POUT Min. POUT VAPC1,2 =0.1V to 1.9V POUT =-10dBm to +32.5dBm DC to 2MHz VAPC =1.9V VAPC=0V VAPC =0to1.9V Specifications Nominal operating limits, POUT <+32.5dBm DC Current at POUT,MAX VAPC1,2 =0.1V. No RF input power. MHz dBm % dBm dBm dBm dBm dBm dBm RBW =100kHz, 1805MHz to 1880MHz, POUT > 32.5dBm, VCC =3.2V VAPCDCS =0.1V, PIN =-5dBm 0dBm Operating Frequency Range Maximum Output Power PAE Efficiency Recommended Input Power Range Output Noise Power Forward Isolation Second Harmonic Third Harmonic All Other Non-Harmonic Spurious Input Impedance Input VSWR Output Load VSWR (Stability) Output Load VSWR (Ruggedness) Output Load Impedance 2 POWER AMPLIFIERS Power Control VAPC 2 Power Control "ON" Power Control "OFF" Power Control Range Gain Control Slope APC Input Capacitance APC Input Current Turn On/Off TIme Overall Power Supply Power Supply Voltage Power Supply Current Rev A4 010420 2-263 RF3160 Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 Pkg Base Function GND DCS IN GND GSM IN GND VCC GND VCC GND GSM OUT GND DCS OUT GND VAPC GND BAND SELECT GND Description Connects to module backside ground. RF input to the DCS band. This is a 50 input, external DC-blocking capacitor required. See application schematic. Connects to module backside ground. RF input to the GSM band. This is a 50 input. No external DC-blocking capacitor required. See application schematic. Connects to module backside ground. Power supply for stages 1 and 2 of both the GSM and DCS power amplifiers. External low frequency bypassing capacitor required. See application schematic. Connects to module backside ground. Power supply for output stages of both the GSM and DCS power amplifiers. External low frequency bypassing capacitor required. See application schematic. Connects to module backside ground. RF output for the GSM band. This is a 50 output. External DC-blocking capacitor required. See application schematic. Connects to module backside ground. RF output for the DCS band. This is a 50 output. External DC-blocking capacitor required. See application schematic. Connects to module backside ground. Single input analog power control voltage for the GSM and DCS band. Connects to module backside ground. Logic low (GSM enable) or logic high (DCS enable) provides single IO band selection. Module backside ground. Preliminary Interface Schematic 2 POWER AMPLIFIERS 2-264 Rev A4 010420 Preliminary Pin Out Top View BAND SELECT RF3160 GND VAPC 2 13 GND GND 1 DCS IN 2 12 DCS OUT GND 3 11 GND GSM IN 4 10 GSM OUT 6 7 GND VCC Rev A4 010420 VCC 8 GND 5 9 GND 2-265 POWER AMPLIFIERS 16 15 14 RF3160 Application Schematic BAND SELECT 16 15 14 13 10 pF 2 3 50 strip GSM IN 4 5 6 7 8 3.3 uF 10 9 12 11 33 pF Preliminary VAPC 2 POWER AMPLIFIERS DCS IN 1 50 strip 10 pF 50 strip DCS OUT 50 strip GSM OUT VCC 2-266 Rev A4 010420 Preliminary Evaluation Board Layout Board Size 2.0" x 2.0" Board Thickness 0.032", Board Material FR-4, Multi-Layer Assembly Top RF3160 2 POWER AMPLIFIERS Inner 1 Back Rev A4 010420 2-267 RF3160 Preliminary 2 POWER AMPLIFIERS 2-268 Rev A4 010420 |
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